廣泛適合于航空航天的微型石英晶體振蕩器X1G005591027900，晶振已經成為無處不在的元器件之一，同時也為我們帶來全新的體驗，每一款晶振產品的性能，都代表著其與電子產品的完美結合，并且能夠展示出其巨大的價值，人們對于電子產品的剛需程度遠遠超乎我們的實際的想象，同時也為我們生活帶來無盡的便利。而晶振在其中扮演什么樣的角色呢？在所有微處理器，微控制器，GPU和CPU等，大多數情況下回選擇石英晶體振蕩器作為其頻率確定裝置來產生其時鐘波形。正如我們所知，與電阻電容相比，石英晶體振蕩器提供最高的精度和頻率穩定性（ RC）或電感電容（LC）振蕩器。
CPU時鐘決定處理器運行和處理數據的速度，微處理器，時鐘速度為1MHz的GPU或微控制器意味著它可以在每個時鐘周期內以每秒100萬次的速度處理數據。

廣泛適合于航空航天的微型石英晶體振蕩器X1G005591027900，而我們所知道的愛普生公司，推出了優質的SPXO振蕩器，SMD振蕩器，型號SG-8018CE，編碼X1G005591027900，頻率26.000000兆赫，輸出WaveCMOS，供電電壓1.62至3.63 V，尺寸(長×寬×高)3.20 × 2.50 × 1.20毫米，工作溫度-40到+105°C，頻率公差±50ppm，額外的OptionsN /，OSC TypeProgrammable Clock時鐘OSC大多數微處理器，微控制器和GPU都有兩個標記為OSC1和OSC2的振蕩器引腳，用于連接外部晶振電路—標準RC振蕩器網絡。在這種類型的微處理器應用中，石英晶體振蕩器產生一系列連續的方波脈沖，其基本頻率取決于晶振本身標配輸出頻率。這個基本頻率調節控制處理器設備的指令程序，例如，主時鐘和系統時序。

Product Number	愛普生晶振型號	Frequency	LxWxH	Output Wave	Supply Voltage	Ope Temperature	Freq. Tol.	I [Max]
X1G005591027800	SG-8018CE	2.097152 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005591027900	SG-8018CE	26.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591028000	SG-8018CE	14.318180 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005591028100	SG-8018CE	36.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591028200	SG-8018CE	121.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 6.7 mA
X1G005591028300	SG-8018CE	72.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 5.2 mA
X1G005591028400	SG-8018CE	36.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591028500	SG-8018CE	33.333000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591028600	SG-8018CE	120.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 6.7 mA
X1G005591028700	SG-8018CE	12.582900 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005591028800	SG-8018CE	26.664000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591028900	SG-8018CE	33.333333 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591029000	SG-8018CE	8.890000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005591029100	SG-8018CE	20.160000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591029200	SG-8018CE	47.500000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591029300	SG-8018CE	11.400000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005591029400	SG-8018CE	52.500000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 5.2 mA
X1G005591029500	SG-8018CE	12.600000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005591029600	SG-8018CE	66.666600 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 5.2 mA
X1G005591029700	SG-8018CE	25.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591029800	SG-8018CE	10.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005591029900	SG-8018CE	50.193300 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 5.2 mA
X1G005591030000	SG-8018CE	13.330000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005591030100	SG-8018CE	27.600000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591030200	SG-8018CE	68.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 5.2 mA
X1G005591030300	SG-8018CE	63.200000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 5.2 mA
X1G005591030400	SG-8018CE	3.840000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005591030500	SG-8018CE	20.971520 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591030600	SG-8018CE	4.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005591030700	SG-8018CE	8.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005591030800	SG-8018CE	7.159090 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005591030900	SG-8018CE	2.048000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005591031000	SG-8018CE	25.600000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591031100	SG-8018CE	30.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591031200	SG-8018CE	32.500000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591031300	SG-8018CE	22.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591031400	SG-8018CE	4.915200 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005591031500	SG-8018CE	3.579546 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005591031600	SG-8018CE	21.250000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591031700	SG-8018CE	3.612700 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005591031800	SG-8018CE	13.333333 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA